inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon npn power transistor 2SC4005 description high dc current gain. large current capacity and wide aso. on-chip zener diode of 50 8v between collector and base. large inductive load handling capability. micaless package facilitating mounting. applications designed for use in switching of l load (motor drivers, printer hammer drivers, relay drivers. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 42 v v ceo collector-emitter voltage 42 v v ebo emitter-base voltage 6 v i c collector current-continuous 2 a i cm collector current-pulse 4 a i b base current-continuous 0.4 a p t total power dissipation @t c =25 15 w total power dissipation @t a =25 2.0 t j junction temperature 150 t stg storage temperature -55~150
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor 2SC4005 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo collector-emitter voltage i c =1ma ; r be = 42 58 v v cbo collector-emitter sustaining voltage i c = 0.1ma ;i 60 v v ce (sat)- 1 collector-emitter saturation voltage i c = 4a; i b = 0.2a 0.3 v v ce (sat)- 2 collector-emitter saturation voltage i c = 6a; i b = 0.3a 0.5 v v be (sat)- 1 base-emitter saturation voltage i c = 4a; i b = 0.2a 1.2 v v be (sat)- 2 base-emitter saturation voltage i c = 6a; i b = 0.3a 1.5 v i cbo collector cutoff current v cb = 60v ; i e = 0 10 a i cer collector cutoff current v ce = 60v ; r be = 50 ,t a =125 1.0 ma i cex collector cutoff current v ce = 60v; v be(off) = -1.5v v ce = 60v; v be(off) = -1.5v,t a =125 10 1.0 a ma i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe-1 dc current gain i c = 0.7a ; v ce = 2v 100 h fe-2 dc current gain i c = 1.5a ; v ce = 2v 100 400 h fe-3 dc current gain i c = 4.0a ; v ce = 2v 60 c ob output capacitance i e = 0 ; v cb = 10v; f= 1.0mhz 100 pf f t current-gainbandwidth product i c = 1a ; v ce = 10v 150 mhz switching times t on turn-on time i c = 4.0a ,r l = 12.5 , i b1 = -i b2 = 0.2a,v cc 50v 0.3 s t stg storage time 1.5 s t f fall time 0.3 s ? h fe-2 classifications m l k 100-200 150-300 200-400
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